Thin film manganin gages and ytterbium gages were fabricated by magnetron sputtering.
采用磁控溅射法制备锰铜薄膜,溅射和真空蒸发法制备镱薄膜.
Magnetically controlled cathod plasma sputtering technique was used to manufacture the plating manganin film.
用磁控溅射低温沉积镀膜技术制做锰铜薄膜,能够保持薄膜中锰、铜、镍成份的相对稳定和锰铜合金正六面三元固溶体金相结构的特性.
The factors and mechanism affecting the TCR of manganin thin films were discussed.
同时对影响锰铜薄膜TCR( TemperatureCoeffcient ofResistance )值的因素及机理进行了讨论.