ldmos
abbr.
lateral double-diffused metal-oxidesemiconductor technology 横向双扩散金属氧化物半导体技术;
例句:
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RF power LDMOS with a trench drift region is optimally designed.
对射频功率LDMOS槽形漂移区的结构进行了优化设计.
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In this paper we analyze linear region of - well LDMOS voltage - current characteristic at low voltage.
对小电压下的LDMOS伏安特性线性区进行了分析.
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It is represented the optimization and implementation of step drift doping profiles SOI LDMOS.
SOI阶梯掺杂漂移区LDMOS的优化设计与制备实验.